Piezoelectric single crystal device

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C252S06290R, C501S134000

Reexamination Certificate

active

07402938

ABSTRACT:
A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trtrepresents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.

REFERENCES:
patent: 4689517 (1987-08-01), Harnden et al.
patent: 4714847 (1987-12-01), Harnden et al.
patent: 5763983 (1998-06-01), Huang
patent: 5804907 (1998-09-01), Park et al.
patent: 5804908 (1998-09-01), Yano
patent: 5998910 (1999-12-01), Park et al.
patent: 6231779 (2001-05-01), Chiang et al.
patent: 6238481 (2001-05-01), Yamashita et al.
patent: 6545387 (2003-04-01), Lee et al.
patent: 7015628 (2006-03-01), Matsushita et al.
patent: 7309949 (2007-12-01), Kashiwaya et al.
patent: 7309950 (2007-12-01), Aoki et al.
patent: 2003/0164137 (2003-09-01), Han
patent: 2003/0178914 (2003-09-01), Ogawa et al.
patent: 2004/0232803 (2004-11-01), Matsushita et al.
patent: 2005/0109263 (2005-05-01), Chiang et al.
patent: 2005/0194868 (2005-09-01), Kashiwaya et al.
patent: 2007/0108876 (2007-05-01), Ogawa
patent: 2007/0152182 (2007-07-01), Yasuda et al.
patent: 2007/0228896 (2007-10-01), Matsushita
patent: 2007/0267947 (2007-11-01), Matsushita et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Piezoelectric single crystal device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Piezoelectric single crystal device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Piezoelectric single crystal device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2797870

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.