Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices
Reexamination Certificate
2008-07-22
2008-07-22
Dougherty, Thomas M (Department: 2834)
Electrical generator or motor structure
Non-dynamoelectric
Piezoelectric elements and devices
C252S06290R, C501S134000
Reexamination Certificate
active
07402938
ABSTRACT:
A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trtrepresents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.
REFERENCES:
patent: 4689517 (1987-08-01), Harnden et al.
patent: 4714847 (1987-12-01), Harnden et al.
patent: 5763983 (1998-06-01), Huang
patent: 5804907 (1998-09-01), Park et al.
patent: 5804908 (1998-09-01), Yano
patent: 5998910 (1999-12-01), Park et al.
patent: 6231779 (2001-05-01), Chiang et al.
patent: 6238481 (2001-05-01), Yamashita et al.
patent: 6545387 (2003-04-01), Lee et al.
patent: 7015628 (2006-03-01), Matsushita et al.
patent: 7309949 (2007-12-01), Kashiwaya et al.
patent: 7309950 (2007-12-01), Aoki et al.
patent: 2003/0164137 (2003-09-01), Han
patent: 2003/0178914 (2003-09-01), Ogawa et al.
patent: 2004/0232803 (2004-11-01), Matsushita et al.
patent: 2005/0109263 (2005-05-01), Chiang et al.
patent: 2005/0194868 (2005-09-01), Kashiwaya et al.
patent: 2007/0108876 (2007-05-01), Ogawa
patent: 2007/0152182 (2007-07-01), Yasuda et al.
patent: 2007/0228896 (2007-10-01), Matsushita
patent: 2007/0267947 (2007-11-01), Matsushita et al.
Iwasaki Yosuke
Matsushita Mitsuyoshi
Dougherty Thomas M
JFE Mineral Co., Ltd.
Oliff & Berridg,e PLC
LandOfFree
Piezoelectric single crystal device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Piezoelectric single crystal device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Piezoelectric single crystal device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2797870