Piezoelectric lead zirconium titanate device and method for form

Details Piezoelectric lead zirconium titanate device and method for form Piezoelectric lead zirconium titanate device and method for form

1993-05-05

1994-08-16

Peckman, Kristine L.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310311, 310313A, 310313R, H01L 4108

Patent

active

053389999

ABSTRACT:
A piezoelectric device, such as a surface acoustic wave filter, comprises a piezoelectric film composed of a lead zirconium titanate compound applied to a substrate formed of silicon or gallium arsenide. The device includes an intermediate film between the piezoelectric film and the substrate and composed of a lead-free zirconium titanate compound to prevent interaction between lead oxide in the piezoelectric material and the material of the substrate that would otherwise cause spalling or adversely effect the electrical properties of the substrate. The piezoelectric device is made by first applying the film of the lead-free zirconium titanate compound and thereafter applying the film of the lead zirconium titanate compound. Preferably, the lead-free zirconium titanate film is applied by sputtering and annealed to densify the material and increase the dielectric constant prior to depositing the piezoelectric material.

REFERENCES:
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patent: 5091669 (1992-02-01), Mitsutsuka
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"Synthesis of Highly Oriented Lead Zirconate-Lead Titanate Film Using Metallo-organics" by S. Hirano et al., Journal of American Ceramic Soc. 1992.
"PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering" by K. Abe et al., Japanese Journal of Applied Physics, Sep. 1991.

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