Piezoelectric element

Details Piezoelectric element Piezoelectric element

2011-03-08

2011-03-08

McNeil, Jennifer C (Department: 1784)

Stock material or miscellaneous articles

Composite

Of inorganic material

C310S311000, C310S357000, C310S358000, C428S332000, C428S336000, C428S702000

Reexamination Certificate

active

07901800

ABSTRACT:
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

REFERENCES:
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patent: 2007/0024162 (2007-02-01), Shibata et al.
patent: 2007/0126313 (2007-06-01), Ueno et al.
patent: 2007-19302 (2007-01-01), None
Blomqvist et al., “Visible and IR Light Waveguiding in Ferroelectric Na0.5K0.5NbO3 Thin Films”. Integrated Ferroelectrics, vol. 69, (2005) pp. 277-286.
Blomqvist et al. “RF sputtered Na0.5K0.5NbO3 Films on Oxide Substrates as Optical Waveguiding Material”, Integrated Ferroelectrics, vol. 54, (2003) pp. 630-641.
English Machine Translation of Japanese Publication (2007-019302) provided by the JPO website, Retrieval date of Feb. 26, 2009.
Soderlind et al. “Sol-Gel synthesis and Characterization of Na0.5K0.5NbO3 thin films”, Journal of Crystal Growth, vol. 281, 2005, pp. 468-474.

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