Piezoelectric crystalline film of zinc oxide and method for maki

Details Piezoelectric crystalline film of zinc oxide and method for maki Piezoelectric crystalline film of zinc oxide and method for maki

1978-09-14

1980-08-26

Cooper, Jack

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204192SP, 252 629, 427100, 428432, 428469, 428492, 428539, C23C 1500, C04B 3500

Patent

active

042196086

ABSTRACT:
Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive or additives, at least one element selected from the group of sulphur, selenium and tellurium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with goal conversion efficiency. The piezoelectric crystalline films are made by sputtering zinc oxide and an additive onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing at least one element of the group consisting of sulphur, selenium and tellurium.

REFERENCES:
patent: 3420763 (1969-01-01), Polito et al.
patent: 3573960 (1971-04-01), Duncan
patent: 3766041 (1973-10-01), Wasa et al.
patent: 3988232 (1976-10-01), Wasa et al.
Ohnishi et al., "Japan J. Appl. Phys." 9, No. 4, 1970, p. 412.

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