Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Intervalley transfer
Reexamination Certificate
2007-02-27
2007-02-27
Smith, Matthew (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Intervalley transfer
C257S007000, C257S038000, C257SE27006, C365S157000
Reexamination Certificate
active
10326172
ABSTRACT:
A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure.
REFERENCES:
patent: 5673220 (1997-09-01), Gendlin
patent: 6064587 (2000-05-01), Jo
patent: 6280677 (2001-08-01), Yakobson
patent: 6376971 (2002-04-01), Pelrine et al.
patent: 6538262 (2003-03-01), Crespi et al.
patent: 6566983 (2003-05-01), Shin
patent: 6669256 (2003-12-01), Nakayama et al.
patent: 6756795 (2004-06-01), Hunt et al.
patent: 2002/0130673 (2002-09-01), Pelrine et al.
Appenzeller Joerg
Avouris Phaedon
Martel Richard
Misewich James Anthony
Schrott Alejandro Gabriel
International Business Machines - Corporation
McGinn IP Law Group PLLC
Nguyen Thinh T.
Smith Matthew
Tuchman, Esq. Ido
LandOfFree
Piezoelectric array with strain dependant conducting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Piezoelectric array with strain dependant conducting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Piezoelectric array with strain dependant conducting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3892891