Piezo-optical pressure sensitive switch with porous material

Details Piezo-optical pressure sensitive switch with porous material Piezo-optical pressure sensitive switch with porous material

1993-06-16

1995-02-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257415, 257417, 257418, 257419, 73517R, 73777, H01L 2984

Patent

active

053878035

ABSTRACT:
Piezo-optical pressure sensitive devices employing porous semiconductor material as a stress sensitive member. The devices monitor pressure or force applied thereto by detecting a corresponding change in the amount of light absorbed by a porous layer of semiconductive material such as silicon. A pressure or stress signal is thus converted into an optical one. The sensing element of an optical switch embodiment of the device is comprised of a transparent layer of material upon which there is disposed a porous layer of semiconductive material. When unstressed, the porous layer absorbs monochromatic light of a predetermined wavelength. When the porous layer is stressed, a metallized epitaxial layer formed thereon reflects the light back through the transparent layer where it can be detected by a light detection system.

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Suzuki et al., "A 1024-Element High-Performance Silicon Tactile Imager," IEEE Transactions on Electron Devices, vol. 17, No. 8, Aug. 1990, pp. 1852-1859.
Cavity Quantum Electrodynamics, Scientific American, Serge Haroche and Jean-Michel Raimond, Apr. 1993, pp. 54-62.
Piezoresistance and Quantum Confinement in Microcrystalline Silicon, Materials Research Society Symposium Proc., vol. 256, J. S. Foresi and T. D. Moustakas, pp. 77-82.

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