Physical vapor deposition targets, and methods of...

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Reexamination Certificate

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C148S425000, C148S426000, C148S427000, C148S428000, C148S429000, C148S430000, C148S431000, C148S432000, C148S433000, C148S434000, C148S435000, C148S436000, C148S437000, C148S438000, C148S439000, C148S440000, C204S298120, C204S298130

Reexamination Certificate

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06946039

ABSTRACT:
The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar <220> texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.

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