Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1999-09-08
2000-08-08
Diamond, Alan
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429808, 20429812, 20429815, 20429802, 118723E, 118723I, 118728, 118723R, C23C 1438, C23C 1440, C23C 1442, C23C 1444
Patent
active
060997052
ABSTRACT:
A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.
REFERENCES:
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5707498 (1998-01-01), Ngan
patent: 5961793 (1999-10-01), Ngan
Chen Hsueh-Chung
Lur Water
Wu Juan-Yuan
Diamond Alan
Hsu Winston
United Microelectronics Corp.
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