Physical fuse for semiconductor integrated circuit

Details Physical fuse for semiconductor integrated circuit Physical fuse for semiconductor integrated circuit

1996-07-11

1999-10-19

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257530, H01L 2900

Patent

active

059694033

ABSTRACT:
A fuse for an integrated circuit is constituted by a shallow NP junction, covered with a metal contact, the semiconductor region being not excessively doped. For the blowing of the fuse, the junction is forward biased with a current sufficient to enable a diffusion of metal up to the junction. This short-circuits the junction. The detection is done also by the forward biasing of the junction, but with a low current or a low voltage. The detection can also be done with reverse biasing.

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Patent Abstracts of Japan, vol. 12, No. 265 (E-637) Jul. 23, 1988 & JP-A-63 048 837 (Fujitsu).
Patent Abstracts of Japan, vol. 12, No. 265 (E-637) Jul. 23, 1988 & JP-A-63 048 838.

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