Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-07-05
2011-07-05
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31074
Reexamination Certificate
active
07973379
ABSTRACT:
A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.
REFERENCES:
patent: 5847397 (1998-12-01), Moustakas
patent: 6673478 (2004-01-01), Kato et al.
patent: 2001/0017257 (2001-08-01), Choi et al.
patent: 2003/0160176 (2003-08-01), Vispute et al.
patent: 2005/0098844 (2005-05-01), Sandvik et al.
patent: 2005/0145970 (2005-07-01), Lu et al.
patent: 2006/0233969 (2006-10-01), White et al.
patent: 1349203 (2003-10-01), None
patent: 3-241777 (1991-10-01), None
patent: 10-182290 (1998-07-01), None
patent: 2002105625 (2002-04-01), None
patent: 2006-278487 (2006-10-01), None
Fabricius et al., “Ultraviolet ditectors in thin sputtered ZnO films,” Aug. 15, 1986, Applied Optics, vol. 25, No. 16, pp. 2764-2767.
S. -H. Kim, H. -K Kim, and T. -Y. Seong: “Effect of Hydrogen peroxide treatment on characteristic of Pt Schottky contact on n-type ZnO”App. Phys. Lett., vol. 86, Mar. 2005, pp. 112101-1 to 112101-3.
Ip et al: “Contacts to ZnO”Journal of Crystal Growth, Elsevier, Amsterdam, NL, vol. 287 No. 1 Dec. 2, 2005, pp. 149-156.
Liang S et al: “Zno Schottky utraviolet photo detectors”Journal of Crystal Growth, Elsevier, Amsterdam, NL, vol. 225, No. 2-4, May 2001 pp. 110-113.
H. Ko, M. Han, Y. Park, Y. Yu, B. Kim, and J. Kim: “Improvement of the quality of ZnO substrates by annealing”,Journal of Crystal Growth, Elsevier, Amsterdam, NL, vol. 269, Sep. 2004, pp. 493-498.
Japanese Office Action (Notification of Reason for Refusal) dated Mar. 10, 2011 in Japanese Application No. 2006-088262.
Haruyuki Endo et al., “Studies on ZnO Single Crystal and its Applications,” Iwate Industrial Research Institute Study Reports, vol. 12 (2005), pp. 83-86.
Endo Haruyuki
Goto Shunsuke
Hasegawa Tatsuo
Izumida Fukunori
Kashiwaba Yasube
Citizen Holdings Co. Ltd.
Holtz Holtz Goodman & Chick PC
Incorporated National University Iwate University
Local Independent Administrative Agency Iwate Industrial Researc
Wilson Allan R
LandOfFree
Photovoltaic ultraviolet sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photovoltaic ultraviolet sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photovoltaic ultraviolet sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2632608