Photovoltaic oxide charge measurement probe technique

Details Photovoltaic oxide charge measurement probe technique Photovoltaic oxide charge measurement probe technique

1996-12-12

1997-07-22

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324765, G01R 3102

Patent

active

056507313

ABSTRACT:
An apparatus for measuring charge in an oxide layer overlying a silicon substrate containing very high density product chips characterized by thick oxides and high substrate doping levels in the field regions. A specially designed extremely thin conductive probe is pressed against the oxide layer whose charge is to be measured. A bias is applied to the probe for biasing the underlying silicon surface into accumulation or inversion. An intensity modulated light beam is focussed at the point of probe contact. The resulting amplitude modulated photovoltage is detected and applied to a computer to derive the value of the oxide charge therefrom.

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