Photovoltaic imaging for large area semiconductors

Details Photovoltaic imaging for large area semiconductors Photovoltaic imaging for large area semiconductors

1983-12-14

1986-07-08

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

29574, 324158D, G01R 3126, H01L 2166

Patent

active

045995583

ABSTRACT:
An imaging system for detecting recombination center defects in a semiconductor wafer in which an oxidized wafer is pre-treated by charging the oxide in a corona discharge and then passing the charged wafer below a stationary bifurcated electrode. A focused laser beam is scanned between the arms of the bifurcated electrode and along its length as the wafer is slowly moved transversely to the direction of laser scanning. The signal from the bifurcated electrode is displayed in an imaging system, one axis of which is synchronized to the laser scanning and the other axis is synchronized to the movement of the wafer.

REFERENCES:
patent: 4051437 (1977-09-01), Lile et al.
patent: 4287473 (1981-09-01), Sawyer
patent: 4333051 (1982-06-01), Goodman
Philbrick et al.; "Scanned Surface Photovoltage Detection of Defects in Silicon Wafers"; IEEE 13th Annual Proceedings of Reliability Physics; 1975; pp. 159-167.

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