Photovoltaic-ferroelectric beam accessed memory

Static information storage and retrieval – Radiant energy – Photoconductive and ferroelectric

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365117, G11C 1308, G11C 1122

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042505674

ABSTRACT:
A three dimensional memory which is comprised of a plurality of stacked memory planes, each of which includes at least a continuous transparent photovoltaic-ferroelectric layer sandwiched between two continuous plane transparent electrodes. In one embodiment, the memory planes are comprised of only the photovoltaic-ferroelectric layer sandwiched between the two electrodes, and in another embodiment the ferroelectric layer and a continuous transparent photoconductive layer are sandwiched between the two electrodes.

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Oliver et al., An Optical Image Storage and Processing Device Using Electptic Zns, IEEE Trans. on Electron Devices, 9/71, vol. ED-18, No. 9, pp. 769-774.

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