Photovoltaic element of junction type with an organic semiconduc

Details Photovoltaic element of junction type with an organic semiconduc Photovoltaic element of junction type with an organic semiconduc

1992-01-15

1993-06-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

257449, 257461, 257471, H01L 2928

Patent

active

052201813

ABSTRACT:
An improved junction type photovoltaic element, characterized by having an organic semiconductor layer formed of a polysilane compound of 6000 to 200000 in weight average molecular weight which is represented by the following general formula (I): ##STR1## Wherein, R.sub.1 stands for an albyl group of 1 to 2 carbon atoms; R.sub.2 stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 3 to 8 carbon atoms; R.sub.3 stands for an alkyl group of 1 to 4 carbon atoms; R.sub.4 stands for an alkyl group of 1 to 4 carbon atoms; A and A' respectively stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 4 to 12 carbon atoms wherein the two substituents may be the same or different one from the other; and each of n and m is a mole ratio showing the proportion of the number of respective monomers versus the total of the monomers in the polymer wherein n+m=1, 0<n.ltoreq.1 and 0.ltoreq.m<1.

REFERENCES:
patent: 4618551 (1986-10-01), Stolka et al.
patent: 4772525 (1988-09-01), Badesha et al.
patent: 4839451 (1989-06-01), Badesha et al.
patent: 4855201 (1989-08-01), Badesha et al.
Kepler, R. G. et al. "Photocarrier generation and transport in .sigma.-bonded polysilanes", Physical Review B, vol. 35, No. 6, Feb. 15, 1987, pp. 2818-2822.
Mazdiyasni, K. S. et al. "Characterization of Organosilicon-Infiltrated Porous Reaction-Sintered Si.sub.3 N.sub.4 ", Journal of the American Ceramic Society, vol. 61, No. 11-12, Nov.-Dec. 1978, pp.504-508.

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