Photovoltaic element having a specific doped layer

Details Photovoltaic element having a specific doped layer Photovoltaic element having a specific doped layer

1997-09-19

1999-06-22

Rodee, Christopher D.

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 136261, H01L 31028

Patent

active

059139862

ABSTRACT:
A photovoltaic element having a semiconductor junction structure, characterized in that said semiconductor junction structure has a doped layer of p-type or n-type composed of a non-single crystalline material containing one or more elements belonging to group IV of the periodic table as a principal constituent thereof, and said doped layer contains a plurality of regions each comprising a diminished density region of said group IV element as the principal constituent of the doped layer such that said group IV element diminished density regions are intermittently distributed in the doped layer. Said semiconductor junction structure has a substantially intrinsic semiconductor layer at least of which being composed of a microcrystalline semiconductor material.

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Yang, et al. "Double-junction amorphous silicon based solar cells with 11% stable efficiency", Appl. Phys. Lett. 61, 24, Dec. 1992, pp. 2917-2919.
Meier, et al. "Intrinsic Microcrystalline silicon (.mu.c-Si:H)--A Promising New Thin Film Solar Cell Material", Conf. Record, 24th IEEE Photovolt. Spec. Conf.; vol. I, pp. 409-412, Dec. 1994.
Pamphlet of the 53rd Applied Physics Society Conf. (1992), p. 746, 17p-B-5.

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