Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Patent
1995-05-26
1997-12-02
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
257 53, 257 75, 136258, H01L 310376
Patent
active
056939574
ABSTRACT:
A photovoltaic element is produced by forming a plurality of layers of amorphous semiconductor thin films on a substrate, whereby at least one of the plurality of layers contains an impurity that hinders crystallization resulting from thermal annealing, and then thermally annealing the amorphous semiconductor thin films thereby crystallizing the film except for the layer containing the impurity. In the finished photovoltaic element, the resulting crystalline semiconductor film and the non-crystallized, amorphous semiconductor film can form a heterojunction. The amorphous film can be arranged closer to the substrate, i.e. between the crystalline film and the substrate.
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Aya Yoichiro
Sano Keiichi
Fasse W. F.
Fasse W. G.
Guay John
Saadat Mahshid D.
Sanyo Electric Co,. Ltd.
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