Photovoltaic element

Details Photovoltaic element Photovoltaic element

2005-02-01

2005-02-01

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S458000, C257S459000, C257S464000

Reexamination Certificate

active

06849917

ABSTRACT:
In a photovoltaic element obtained by forming an ITO film, that is a transparent conductive film, on a semiconductor layer composed of an n-type silicon wafer, an i-type amorphous silicon hydride layer and a p-type amorphous silicon hydride layer, the ITO film has an interface layer as an alkali diffusion prevention region on a side adjacent to the semiconductor layer, and a bulk layer layered on the interface layer. The crystallinity of the interface layer is made lower than that of the bulk layer by changing the water partial pressure when forming the interface layer and the bulk layer.

REFERENCES:
patent: 5057244 (1991-10-01), Nitta et al.
patent: 5626688 (1997-05-01), Probst et al.
patent: 20010029978 (2001-10-01), Nakai et al.

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