Photovoltaic device with O and N doping

Details Photovoltaic device with O and N doping Photovoltaic device with O and N doping

1988-07-29

1989-06-27

Hille, Rolf

357 2, 357 58, 357 59, 357 30, 357 90, H01L 29167

Patent

active

048434515

ABSTRACT:
A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.

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patent: 4781765 (1988-11-01), Watanabe et al.
Tsuda et al, "The Light Induced Degradation of A-Si Films and Solar Cells", Technical Digest of the International PVSEC-1, Kobe, Japan, 1984, 213-216.

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