Photovoltaic device having an extended PN junction

Details Photovoltaic device having an extended PN junction Photovoltaic device having an extended PN junction

1976-11-01

1978-09-05

Miller, Jr., Stanley D.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136 89SJ, 357 20, H01L 3106

Patent

active

041124570

ABSTRACT:
A photovoltaic device having essentially only a body of semiconductor material having a first region of one conductivity type in contact with a second region of the opposite conductivity type, forming a portion of the device PN junction therebetween. A plurality of pocket regions of the same conductivity type as the first region extend into the second region thereby further defining a portion of the PN junction in the second region.

REFERENCES:
patent: 3278337 (1966-10-01), Gault
patent: 3969746 (1976-07-01), Kendall et al.
Hovel et al., "Method for Si and GaAs Solar Cell Diffusion", IBM TDB, vol. 16, No. 7, Dec. 1973, pp. 2083-2084.

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