Photovoltaic device and method of manufacturing the same

Details Photovoltaic device and method of manufacturing the same Photovoltaic device and method of manufacturing the same

1996-07-11

1998-02-10

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136255, 136258, 257 55, 257458, 438 96, 438 97, H01L 31075, H01L 3120

Patent

active

057164800

ABSTRACT:
A photovoltaic device having a pin type semiconductor junction in which a p-type semiconductor layer and an n-type semiconductor layer are laminated with an interposed i-type semiconductor layer, comprises at least one doped layer of a non-monocrystal semiconductor disposed under and/or over the i-type semiconductor layer, wherein the at least one doped layer has a surface exposed to a plasma containing a band gap increasing element.

REFERENCES:
patent: 2949498 (1960-08-01), Jackson
patent: 4254429 (1981-03-01), Yamazaki
patent: 4377723 (1983-03-01), Dalal
patent: 4816082 (1989-03-01), Guha et al.
patent: 5324364 (1994-06-01), Matsuda et al.
patent: 5589007 (1996-12-01), Fujioka et al.
Y. Hamykawa, "A new type of amorphous silicon photovoltaic cell generating more than 2.0 V", 35 Applied Physics Letters 187 (1979).

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