Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-01-16
2007-01-16
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S055000
Reexamination Certificate
active
10378609
ABSTRACT:
In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate (11) and a p-type amorphous silicon thin film (13) are laminated with an i-type amorphous silicon thin film (12) interposed as well as an n-type amorphous silicon thin film (15) is provided on a rear surface of the crystalline silicon substrate (11) by interposing an i-type amorphous silicon thin film (14) between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate (11) and the i-type amorphous silicon thin films (12), (14) in a higher concentration than that in the i-type amorphous silicon thin films (12), (14).
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Isomura, Masao et al., “Boron-compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities”,Appl. Phys. Lett., vol. 68 (9), Feb. 26, 1996.
Asaumi Toshio
Terakawa Akira
Doan Theresa T.
Sanyo Electric Co,. Ltd.
Westerman, Hattori, Daniels & Adrian , LLP.
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