Photovoltaic device and manufacturing method thereof

Details Photovoltaic device and manufacturing method thereof Photovoltaic device and manufacturing method thereof

2005-04-12

2005-04-12

Luu, Thanh X. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S458000, C136S258000

Reexamination Certificate

active

06878921

ABSTRACT:
A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

REFERENCES:
patent: 5213628 (1993-05-01), Noguchi et al.
patent: 5769963 (1998-06-01), Fujioka et al.
patent: 4-130671 (1992-05-01), None
M. Isomura et al.; “Boron-compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities”; Applied Physics Letters; vol. 68, No. 9; Feb. 26, 1996; pp. 1201-1203./Discussed in the specification.

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