Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1993-06-25
1995-05-23
Weisstuch, Aaron
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136249, 257 53, 257 55, 257458, 437 4, 437101, 437109, 437113, 427574, 427575, 427578, H01L 31075, H01L 3118
Patent
active
054177707
ABSTRACT:
A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4400409 (1983-08-01), Izu et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4626449 (1986-12-01), Hirai et al.
patent: 4645684 (1987-02-01), Osada et al.
patent: 4801474 (1989-01-01), Saitoh et al.
patent: 4812328 (1989-03-01), Saitoh et al.
patent: 4822636 (1989-04-01), Saitoh et al.
patent: 4834023 (1989-05-01), Saitoh et al.
patent: 4844950 (1989-07-01), Saitoh et al.
patent: 4865883 (1989-09-01), Saitoh et al.
patent: 4873125 (1989-10-01), Matsuyama et al.
patent: 4897284 (1990-01-01), Arai et al.
patent: 4921722 (1990-05-01), Osada et al.
patent: 4930442 (1990-06-01), Iida et al.
patent: 5002617 (1991-03-01), Kanai et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5006180 (1991-04-01), Kanai et al.
patent: 5007971 (1991-04-01), Kanai et al.
patent: 5016565 (1991-05-01), Saitoh et al.
patent: 5024706 (1991-06-01), Kanai et al.
patent: 5204273 (1993-04-01), Guha et al.
patent: 5256576 (1993-10-01), Guha et al.
Japanese Journal of Applied Physics, vol. 26, No. 8, Aug. 1987, pp. 1215-1218, T. Watanabe et al., "Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane."
Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. L288-L290, T. Watanabe et al., "Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma."
Applied Physics Letters, vol. 47, No. 10, Nov. 15, 1985, pp. 1061-1063, A. Matsuda et al., "Preparation of Highly Photosensitive Hydrogenated Amorphous Si-Ge Alloys Using a Triode Plasma Reactor."
Aoike Tatsuyuki
Hayashi Ryou
Kariya Toshimitsu
Kouda Yuzou
Matsuyama Jinsho
Canon Kabushiki Kaisha
Weisstuch Aaron
LandOfFree
Photovoltaic device and a forming method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photovoltaic device and a forming method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photovoltaic device and a forming method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2137661