Photovoltaic device

Details Photovoltaic device Photovoltaic device

2005-09-29

2011-11-01

Hendricks, Keith (Department: 1724)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S243000, C136S252000

Reexamination Certificate

active

08049101

ABSTRACT:
In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen between an n-type single-crystal silicon substrate and a p-type amorphous silicon layer containing hydrogen, the photovoltaic device according to the present invention comprises a trap layer that contains less hydrogen than the intrinsic amorphous silicon layer between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer. The trap layer reduces hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer.

REFERENCES:
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patent: 6124545 (2000-09-01), Bauer et al.
patent: 2002/0069911 (2002-06-01), Nakamura et al.
patent: 2003/0168578 (2003-09-01), Taguchi et al.
patent: 2004/0182433 (2004-09-01), Terakawa et al.
patent: 2002-76409 (2002-03-01), None
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2005-257818, mailed Aug. 4, 2009.

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