Photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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357 30, 357 59, H01L 3106

Patent

active

046772499

ABSTRACT:
A photovoltaic device comprises a p-type amorphous layer, an intrinsic amorphous layer, and an n-type amorphous layer formed on a conductive or insulative substrate. The intrinsic amorphous layer is formed by glow discharge decomposition in the atmosphere of silicon tetrafluoride with discharge source frequency in the range between 10 kHz and 100 kHz.

REFERENCES:
patent: 4441973 (1984-04-01), Noguchi
patent: 4504518 (1985-03-01), Ovshinsky et al.
H. Matsumura et al, Chapter 3.4 in Amorphous Semiconductor Technologies & Devices (1982), pp. 88-108.

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