Photovoltaic device

Details Photovoltaic device Photovoltaic device

2011-01-04

2011-01-04

Neckel, Alexa D (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S256000, C136S258000, C136S261000, C136S249000, C257S438000, C257S052000, C257S053000, C257S055000, C257S056000, C257S059000, C257S079000, C257S646000, C438S057000, C438S087000, C438S096000, C430S057400, C430S058100, C430S066000, C430S095000, C428S209000

Reexamination Certificate

active

07863518

ABSTRACT:
A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

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