Photovoltaic device

Details Photovoltaic device Photovoltaic device

2011-01-18

2011-01-18

Michener, Jennifer K (Department: 1728)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S243000, C136S251000, C136S256000, C136S257000, C136S258000, C136S259000, C136S261000

Reexamination Certificate

active

07872194

ABSTRACT:
The present invention provides a photovoltaic device having excellent environmental durability and good adhesion with a collector electrode made of metal paste. The photovoltaic device comprises an ITO film on a p-type amorphous silicon hydride film on a light incident side of the photovoltaic device and a collector electrode made of silver paste on the ITO film. A silicon oxide insulation film made of SiOx is provided on at least regions on the ITO film where the collector electrode is not formed. The thickness of the silicon oxide insulation film is about 1 to 10 times thicker than an arithmetic mean deviation (Ra) of the underlying ITO film. The silicon oxide insulation film is a film having a Si-2p peak with a full width at half maximum of 2.45 or less, which is evaluated by an X-ray photoelectron spectroscopy.

REFERENCES:
patent: 5401330 (1995-03-01), Saito et al.
patent: 6127622 (2000-10-01), Yamada et al.
patent: 6294722 (2001-09-01), Kondo et al.
patent: 6355353 (2002-03-01), Hyodo et al.
patent: 59-47777 (1984-03-01), None
patent: 10-107308 (1998-04-01), None
patent: 2003-347571 (2003-12-01), None
Maruyama (JP 2003-347571) Machine Translation.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2004-283926, mailed Jul. 29, 2008.

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