Photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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357 30, H01L 3106, H01L 31075

Patent

active

050857118

ABSTRACT:
A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.

REFERENCES:
patent: 3990914 (1976-11-01), Weinstein et al.
patent: 4677250 (1987-06-01), Barnett et al.
"Microstructure and Conductivity of P Doped .mu.c-Si:H", By: H. Itosaki et al., Technical Digest of the International PVSEC-1, pp. 707-710 (Nov. 1984).
"Improvements of Interfaces in Tandem-Type Amorphous Silicon Alloy Solar Cells", By: H. Sasaki et al., Technical Digest of the International PVSEC-2, pp. 467-470 (Aug. 1986).
Tawada et al., Jap. Journal Applied Physics, 21 (Supp. 21-1) pp. 297-303 (1982).

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