Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-02-20
1998-01-06
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 52, 257 59, 257 72, H01L 2904, H01L 31036, H01L 310376
Patent
active
057058288
ABSTRACT:
The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.
REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4514582 (1985-04-01), Tiedje et al.
patent: 4737196 (1988-04-01), Yukimuto
patent: 5066340 (1991-11-01), Iwamoto et al.
patent: 5140397 (1992-08-01), Haga et al.
R. A. Arndt, et al., "Optical Properties of the COMSAT Non-Reflective Cell", 11th IEEE Photovoltaic Specialists Conference, Arizona, 1975.
M. Taguchi, et al., "Improvement of the Conversion Efficiency of Polycrystalline Silicon Thin Film Solar Cell", 5th International Photovoltaic Science and Engineering Conference, Kyoto, Japan, Nov. 26-30, 1990.
K. Wakisaka, et al., "More Than 16% Solar Cells..." 22nd IEEEE Photovoltaic Specialists Conference, Las Vegas, USA, Oct. 7-11, 1991.
Iwata Hiroshi
Noguchi Shigeru
Sano Keiichi
Clark S. V.
Saadat Mahshid D.
Sanyo Electric Co,. Ltd.
LandOfFree
Photovoltaic device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photovoltaic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photovoltaic device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2331636