Photovoltaic device

Details Photovoltaic device Photovoltaic device

1980-03-14

1981-06-02

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136258, 357 2, 357 30, H01L 3106

Patent

active

042713285

ABSTRACT:
A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.

REFERENCES:
patent: 4015280 (1977-03-01), Matsushita et al.
patent: 4206002 (1980-06-01), Sabnis et al.
V. L. Dalal, "Design Considerations For a-Si Solar Cells", IEEE Trans. Electron Devices, vol. ED-27, pp. 662-670 (1980).
D. E. Carlson et al., "Amorphous Thin Films For Solar-Cell Applications", Quarterly Report No. 3, Jul. 1979, ReA Labs, Princeton, N.J., for Department of Energy, SAN-2219-3, pp. 69-75.
J. J. Hanak, "Monolithic Solar Cell Panel of Amorphous Silicon", Solar Energy, vol. 23, pp. 145-147 (1979).
Y. Marfaing, "Evaluation of Multijunction Structures Using Amorphous Si-Ge Alloys", Proceedings, 2nd European Community Photovoltaic Solar Energy Conference, Berlin, Apr. 23-26, 1979, Reidel Pub. Co. (1979), pp. 287-294.
Y. Hamakawa et al., "A New Type of Amorphous Silicon Photovoltaic Cell Generating More Than 2.0V", Appl. Phys. Lett., vol. 35, pp. 187-189 (1979).

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