Photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Panel or array

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136258, 136259, 357 2, 357 30, H01L 3106

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active

044763468

ABSTRACT:
A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10.sup.-8 (.OMEGA..multidot.cm).sup.-1 at 20.degree. C. in the layer positioned on the side opposite to incidence of light. The photovoltaic device has an improved efficiency.

REFERENCES:
patent: 4271328 (1981-06-01), Hamakawa et al.
patent: 4272641 (1981-06-01), Hanak
patent: 4388482 (1983-06-01), Hamakawa et al.
Applied Physics Letters, Aug. 1, 1981, vol. 39, No. 3, pp. 237-239.

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