Photovoltaic device

Details Photovoltaic device Photovoltaic device

1990-08-06

1991-11-19

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, H01L 31075, H01L 310368, H01L 310376

Patent

active

050663402

ABSTRACT:
A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.

REFERENCES:
patent: 4016586 (1977-04-01), Anderson et al.
patent: 4434318 (1984-02-01), Gibbons
patent: 4496788 (1985-01-01), Hamakawa et al.
W. Fuhs, "Heterojunctions of Amorphous Silicon and Silicon Single Crystals", Int. Conf. on Tetrahedrally Bonded Amorphous Semiconductors, Yorktown Heights, N.Y., Mar. 1974, pp. 345-350.
H. Matsuura et al, J. Appl. Phys., vol. 55, No. 4, Feb. 1984, pp. 1012-1019.

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