Photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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Details

136258, 136259, 257436, 257762, H01L 3104, H01L 310224, H01L 310376

Patent

active

052501205

ABSTRACT:
This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.

REFERENCES:
Advancing Toward Technology Breakout in Energy Conversion, 21st Intersociety Energy Conversion Engineering Conference, San Diego, California, Aug. 25-29, 1986, pp. 1292-1299.

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