Photovoltaic conversion device and method of manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S437000, C257S444000, C257S451000, C257SE27123

Reexamination Certificate

active

07317237

ABSTRACT:
There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate404doped with boron, which comprises a bulk substrate region404, regions other than the bulk substrate region including an n-type region403ajoining to a light receiving surface of the bulk surface region, a BSF region405joining to a back surface of the bulk surface region,wherein with regions other than the bulk substrate region404being removed, when a minority carrier diffusion length of the bulk substrate region404is measured from the light receiving surface of the bulk surface region, 0.5<(L1/Lpeak)is satisfied, where L1is a minority carrier diffusion length at an arbitrary measuring area of the light receiving surface of the bulk surface region, and Lpeak is a diffusion length corresponding to a maximum peak on the side of higher diffusion length of a histogram, the histogram being formed from data obtained when a minority carrier diffusion length of the light receiving surface of the bulk surface region is measured at a plurality of measurement areas. This structure can reduce influence of impurities such as Fe, and enhances utilization efficiency of silicon ingots. With this structure, a photovoltaic conversion device with high photovoltaic conversion efficiency can be realized.

REFERENCES:
patent: 4135950 (1979-01-01), Rittner
patent: 4490573 (1984-12-01), Gibbons
Zoth, et al., “A Fast, Preparation-Free Method To Detect Iron In Silicon”, J. Appl. Phys. 67 (11), Jun. 1990, pp. 6764-6771.

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