Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1984-02-02
1986-02-04
Weisstuch, Aaron
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136264, 136265, H01L 3106
Patent
active
045687927
ABSTRACT:
A photovoltaic cell includes doped cadmium telluride formed of tetrahedral crystalline host semiconductor material including cadmium and telluride atoms bonded by ionic, covalent, and metallic forces. The host material is alloyed with Group II or VI atoms that replace either some of the host material cadmium or telluride atoms so that the alloyed and host atoms are bonded by at least covalent and metallic forces. The alloyed atoms have bond lengths with the nearest neighboring host atoms that are less than the host bond lengths. The number of bonded alloyed atoms is such that they do not substantially affect electronic conduction properties of the host material and result in a semiconductor region having no more than a few dislocations. A semiconductor of opposite conductivity to the conductivity type of the semiconductor region forms a junction with the region. At least one metal electrode makes ohmic contact with the first region. If the cadmium telluride is p type, the alloyed atoms are selected from the group consisting essentially of zinc, sulphur, and selenum, in which case the n type semiconductor can be cadmium sulphide. The n and p type semiconductors can be of the same compound to form a homojunction.
REFERENCES:
patent: 3261726 (1966-07-01), Ruehrwein
patent: 4179308 (1979-12-01), Olson et al.
patent: 4400244 (1983-08-01), Kroger et al.
patent: 4445965 (1984-05-01), Milnes
R. Radojcic et al., Solar Cells, vol. 4, pp. 101-107 (1981).
T. Chikamura, "Spectral Response of ZnSe-Zn.sub.1-x Cd.sub.x Te Heterojunction", J. Appl. Phys. 53(7), Jul. 1982, pp. 5146-5153.
S. L. Bell et al., "Growth and Characterization of Cadmium Zinc Telluride", presented at the IRIS Detector Specialty Group Meeting, Boulder, Co., Aug., 1983.
T. W. James et al., "Blocking of Threading Dislocations by Hg.sub.1-x CD.sub.x TE Epitaxial Layers", submitted to A.P.L., Aug., 1983.
Timothy W. James et al., "The Influence of Growth Conditions on the Interfacial Dislocation Structure of LPE Hg.sub.1-x Cd.sub.x Te", presented at IRIS Detector Specialty Group Meeting, Boulder, Co. (Aug. 1983).
Hendrik J. Gerritsen, "Electrochemical Deposition of Photosensitive CdTe and ZnTe on Tellurium", Journal of the Electrochemistry Society, Jan. 1984, pp. 136-140.
Fahrenbruch et al., "Recent Investigations of Metal Oxide/CdTe Heterojunction Solar Cells", 13th IEEE Photovoltaic Conf., Jun., 1978, pp. 281-287.
Fahrenbruch et al., "Photovoltaic Heterojunctions for Solar Energy Conversion", 11th IEEE Photovoltaic Conf., May, 1975, pp. 490-496.
Fahrenbruch et al., "II-VI Photovoltaic Heterojunctions for Solar Energy Conversion", Appl. Physics, vol. 25, No. 10, Nov. 1974, pp. 605-608.
Buch et al., "Photovoltaic Properties of n-CdSe/p-ZnTe Heterojunctions", Appl. Physics Letters, vol. 28, No. 10, May 1976, pp. 593-595.
Aranovich, et al., "ZnO Films and ZnO/CdTe Heterojunctions Prepared Using Spray Pyrolysis", 14th IEEE Photovoltaic Conf., San Diego, Calif., Jun. 1980, pp. 633, 634.
Yin et al., "Photovoltaic Properties of ZnCdS/CdTe Heterojunctions Prepared by Spray Pyrolysis", J. Appl. Phys. 49(3), Mar. 1978, pp. 1294-1296.
Serreze et al., "Spray Pyrolysis Prepared CdTe Solar Cells", 15th IEEE Photovoltaic Conf., Kissimmee, Fla., May 1981, pp. 1068-1072.
Aranovich et al., "Photovoltaic Properties of ZnO/CdTe Heterojunctions Prepared by Spray Pyrolysis", J. Appl. Phys. 51(8), Aug. 1980, pp. 4260-4268.
Fahrenbruch et al., "Recent Results on II-VI Heterojunctions for Photovoltaic Solar Energy Conversion", 12th IEEE Conf., Nov. 1976, pp. 529-533.
Jaeger et al., "Transition Resistances of Ohmic Contacts to p-Type CdTe and Their Time-Dependent Variation", Journ. of Electronic Materials, vol. 10, No. 3, 1981, pp. 605-618.
Bube et al., "Photovoltaic Energy Conversion with n-CdS-p-CdTe Heterojunctions and Other II-VI Junctions", IEEE Transactions on Electron Devices, vol. ED-24, No. 4, Apr. 1977, pp. 487-492.
Chem. Abstracts, vol. 95 (1981) Abstracts 222881p; 222882q; 222883r.
Chem. Abstracts, vol. 92 (1980) Abstract 61712e.
Razykov, T. M. et al., "Photovoltaic Effect in Heterojunctions Made of Zinc and Cadmium Tellurides", Sov. Phys. Semicond. 17(5), May 1983, pp. 585-586.
Mooney John B.
Sher Arden
SRI - International
Weisstuch Aaron
LandOfFree
Photovoltaic cell including doped cadmium telluride, a dislocati does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photovoltaic cell including doped cadmium telluride, a dislocati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photovoltaic cell including doped cadmium telluride, a dislocati will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2342020