Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Reexamination Certificate
2005-10-26
2010-12-07
Barton, Jeffrey T (Department: 1795)
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
C136S256000, C136S252000, C136S265000, C204S192250, C204S192260, C438S084000, C438S095000, C427S076000
Reexamination Certificate
active
07847187
ABSTRACT:
The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II):in-line-formulae description="In-line Formulae" end="lead"?ZnTe (I)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?Zn1-xMnxTe (II)in-line-formulae description="In-line Formulae" end="tail"?where x is from 0.01 to 0.99,and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.
REFERENCES:
patent: 6306739 (2001-10-01), Alexander
patent: 6548751 (2003-04-01), Sverdrup et al.
patent: 2003/0051752 (2003-03-01), Sterzel et al.
patent: 102 23 744 (2003-12-01), None
patent: 0 708 488 (1996-04-01), None
patent: 1 388 597 (2004-02-01), None
Yu et al. “Formation of diluted III-V nitride thin films by N ion implantation”. Journal of Applied Physics; vol. 90, No. 5; pp. 2227-2234; Sep. 1, 2001.
Yu et al. “Diluted II-VI Oxide Semiconductors with Multiple Band Gaps”. Physical review letters; vol. 91, No. 24; Dec. 12, 2003.
Antonio Luque, et al.; “Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels”; vol. 78; No. 26; Physical Review Letters; pp. 5014-5017; Jun. 30, 1997.
K. M. Yu, et al.; “Band Anticrossing in Group II-Ox-VI1-xHighly Mismatched Alloys: Cd1˜xMnyOxTe1-xQuaternaries Synthesized by O Ion Implantation”: Applied Physics Letters; vol. 80, No. 9; pp. 1571-1573; Mar. 4, 2002.
K. M. Yu, et al.; “Synthesis and Optical Properties of II-O-Vi Highly Mismatched Alloys”; Journal of applied physics; vol. 95; No. 11; pp. 6232-6238; Jun. 1, 2004.
X. Liu, et al.; “Optical Properties of Epitaxial ZnMnTe and ZnMgTe Films for a Wide Range of Alloy Compositions”; Journal of Applied Physics; vol. 91, No. 5; pp. 2859-2865; Mar. 1, 2002.
H-C Mertins, et al.; “Bandgap of Zn1—xMnxTe:Nonlinear Dependence on Composition and Temperature”; Semicond. Sci. Technol.; 8 (1993); 1634-1638.
Le. Van Khoi, et al.; “Electrical and Magnetic Properties of Phosphorus Doped Bulk Zn1 -xMnxTe”; Moldavian Journal of the Physical Sciences; No. 1; pp. 11-14; 2002.
J. H. Chang, et al.; “Aluminum-Doped n-Type Zn Te Layers Grown by Molecular-Beam Epitaxy” Applied Physics Letters; vol. 79; No. 6; pp. 785-787; Aug. 6, 2001.
Syed Irfan Gheyas, et al.; “Aluminum Doping of ZnTe Grown by MOVPE”; Applied Surface Science 100/101 (1996)634-638.
Gilbert J. Perlow, et al.; “Journal of Applied Physics” vol. 43; Jan.-Dec. 1972.
I. W. Tao, et al.; “Doping of ZnTe by Molecular Beam Epitaxy” Appl. Phys. Lett. 64 (14); Apr. 4, 1994.
T. Trupke, et al. “Improving Solar Cell Efficiencies by the Up-Conversion of Sub-Band-Gap Light” Centre for Third Generation Photovoltaics, University of New South Wales, NSW 2052, Australia, Mar. 2002.
Barton Jeffrey T
BASF - Aktiengesellschaft
Chern Christina
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Photovoltaic cell comprising a photovoltaically active... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photovoltaic cell comprising a photovoltaically active..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photovoltaic cell comprising a photovoltaically active... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4216754