Photovoltaic cell and method of fabricating the same

Details Photovoltaic cell and method of fabricating the same Photovoltaic cell and method of fabricating the same

2007-04-03

2007-04-03

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S053000, C257S461000

Reexamination Certificate

active

10948265

ABSTRACT:
An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.

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Sinton, R. A., et al. “27.5-Percent Silicon Concentrator Solar Cells” IEEE Electron Device Letters, vol. EDL-7, No. 10, Oct. 1986, pp. 567-569.

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