Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-08-10
1995-03-21
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257184, 257187, 257197, 257462, H01L 2714, H01L 3100
Patent
active
053998804
ABSTRACT:
A long wavelength (6 to 20 .mu.m) phototransistor is described which has n-doped silicon as emitter and collector regions bracketing a base region having a quantum well structure made up of alternating layers of p-doped silicon germanium and undoped silicon, The silicon germanium layer adjacent to the emitter region is thicker and has a higher percentage of germanium in order to provide a quantum well that is wider and deeper than the other quantum wells in the base region thereby resulting in a larger current and optical gain. The silicon barrier layer of the quantum well closest to the collector region is p-doped in order to reduce the leakage current of the base-collector junction.
REFERENCES:
patent: 4160258 (1979-07-01), Dawson et al.
patent: 5003366 (1991-03-01), Mishima et al.
patent: 5077593 (1991-12-01), Sato et al.
Chand, N., et al., "Gain of a Heterojunction Bipolar Transistor," IEEE Trans. Elec. Dev., vol. Ed-32, No. 3, Mar. 1985, pp. 622-626.
Karunasiri, R. P. G., "Si.sub.1-x Ge.sub.x /Si Multiple Quantum Well Infrared Detector" Appl. Phys., Lett., vol. 59, No. 20, Nov. 1991, pp. 2588-2590.
AT&T Corp.
Crane Sara W.
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