Phototransistor for long wavelength radiation

Details Phototransistor for long wavelength radiation Phototransistor for long wavelength radiation

1982-04-12

1984-12-11

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 15, H01J 4014

Patent

active

044880383

ABSTRACT:
A photodetector useful at long wavelengths where silicon normally is transparent. It includes a photodiode stage which comprises a silicide layer forming a Schottky-barrier junction with a silicon substrate and which is integrated with an amplification stage which uses a silicon transistor adapted to amplify the photovoltaic voltage derived by the photodiode stage. In the preferred embodiment, the silicide layer forms the grid of a permeable base transistor.

REFERENCES:
patent: 4242695 (1980-12-01), Ouchi et al.
patent: 4358782 (1982-11-01), Takasuka et al.
patent: 4398344 (1983-08-01), Gould
IEEE Journal of Solid-State Circuits, vol. SC-11, No. 1, Feb. 1976, "A Charge-Coupled Infrared Imaging Array with Schottky-Barrier Detectors," E. S. Kohn, pp. 139-146.
International Electron Devices Meeting Technical Digest, Washington, D.C., Dec. 8-10, 1980, "Recent Experimental Results on Permeable Base Transistors," G. D. Alley, C. O. Bozler, D. C. Flanders, R. A. Murphy and W. T. Lindley, pp. 608-612.
Applied Phys. Letters, vol. 40(2), Jan. 15, 1982, "Surface Structure of Epitaxial Pd.sub.2 Si Thin Films," pp. 138-140, K. Oura, S. Okada, Y. Kishikawa, and T. Hanawa.

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