Phototransistor

Patent

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Details

357 13, 357 34, 357 58, H01L 2714

Patent

active

041077210

ABSTRACT:
A phototransistor is operated with a floating base but with the transistor operating point defined by prebiasing the base, typically by injecting the base current through a prebias emitter in the collector region outside of the depletion layer. The phototransistor has a signal to noise ratio comparable to those of optimized avalanche photodiodes but operates at a significantly lower voltage and without need for temperature compensation. The phototransistor is especially well-suited for optical communications at high data rates.

REFERENCES:
patent: 3529217 (1970-09-01), Van Santen
patent: 3532945 (1970-10-01), Weckler
patent: 3675025 (1972-07-01), Feldman
patent: 3697833 (1972-10-01), Nakata
patent: 3745424 (1973-07-01), Ohuchi
patent: 3755721 (1973-08-01), Frohman-Bentchkowsky

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