Photostable amorphous silicon-germanium alloys

Details Photostable amorphous silicon-germanium alloys Photostable amorphous silicon-germanium alloys

1991-12-03

1993-07-27

Wyszomierski, George

Metal treatment

Stock

Amorphous, i.e., glassy

420556, 420578, 136258, C22C 4500

Patent

active

052307530

ABSTRACT:
Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.

REFERENCES:
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4839240 (1989-06-01), Shimizu et al.
Cretella, M. C., et al., "Hydrogenated a-Si.sub.x Ge.sub.1-x : A Potential Solar Cell Material", J. Electrochem. Soc., vol. 129, Dec. 1982.
Saito, N., et al., "Optical and Electrical . . . Magnetron Sputtering", Thin Solid Films, 115(1984), pp. 253-262.
Luft, W., "Characteristics of Hydrogenated Amorphous Silicon-Germanium Alloys", 20th IEEE Photovoltaic Specialists Conf., Sep. 1988.
Nakamura, G., et al., "Staebler-Wroughlei effect in Hydrogenated Amorphous Si.sub.1-x Ge.sub.x ", Solar Cells (9) 1983, pp. 75-84.
Staebler and Wronski, "Reversible Conductivity Changes in Dsicharge-Produced Amorphous Si," Appl. Phys. Lett. 4:292-294 (1977).
Park et al., "Saturation of the Light-Induced Defect Density in Hydrogenated Amorphous Silicon," Appl. Phys. Lett. 55:2658-2660 (1989).
Park et al., "Dependence of the Saturated LIght-Induced Defect Density on Macroscopic Properties of Hydrogenerated Amorphous Silicon," Appl. Phys. Lett. 57:1440-1442 (1990).
Redfield and Bube, "Reinterpretation of Degradation Kinetics of Amorphous Silicon," Appl. Phys. Lett. 54:1037-1039 (1989).
Chen and Yang, "Kinetics of Light Induced Degradation in A-Si:H Solar Cells," Proc. of 14th Lint'l Conf. on Amorph. Semicond., Aug. 19-23 (1991).
Isomura et al., "What Can We Learn from the Saturation of Light-Induced Defects in Amorphous Hydrogenated Silicon?", Solar Cells 30:177-191 (1991).
Guha, "Light-Induced Effects in Amorphous Silicon Alloys-Design of Solar Cells with Improved Stability," J. Noncrystal. Solids 77,78:1451-1460 (1985).
Kolodzey et al., "Measurements of Light-Induced Degradation in a-Si,Ge:H,F Alloys," Mat. Res. Soc. Symp. Proc. 70:237-242 (1986).
Vanecek et al., "Density of the Gap States in Undoped and Doped Glow Discharge a-Si:H," Solar Energy Matls. 8:411-423 (1983).
Wronski et al., "Sub-Bandgap Optical Absorption and LIght-Induced Defects in Amorphous Silicon," AIP conf. Proc. 157:70-77 (1987).
Wagner et al., "Performance and Modeling of Amorphous Silicon Solar Cells Soaked at High Light Intensity," 22nd IEEE Photovoltaic Specialists Conf., Las Vegas, Nevada, Oct. 7-11 (1991).

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