Photosensor with enhanced quantum efficiency

Details Photosensor with enhanced quantum efficiency Photosensor with enhanced quantum efficiency

1987-08-24

1989-04-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, 437173, 25037014, 250371, 250372, 357 24, 357 30, H01L 3100, H01L 3114, H01L 3116

Patent

active

048227480

ABSTRACT:
A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

REFERENCES:
patent: 4040092 (1977-08-01), Carnes
patent: 4266334 (1981-05-01), Edwards et al.
patent: 4276099 (1981-06-01), Keen et al.
patent: 4760031 (1988-07-01), Janesick
Ghandhi, VLSI Fabrication Principles, Wiley and Sons, New York, NY (1983), pp. 385-387.
Bhatia et al., IBM Tech. Disc. Bull., vol. 15, No. 3 (Aug. 1972), pp. 723-724.

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