Photosensor having impurity concentration gradient

Electric lamp and discharge devices – With temperature modifier – For lead-in-seal or stem protection

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357 2, 357 30, 357 90, 313366, 313386, H01J 3100, H01L 2714, H01L 3100

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active

046268855

ABSTRACT:
A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.

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Thompson et al., R. F. Sputtered Amorphous Silicon Solar Cells, Proc. Int'l. Photovoltaic Solar Energy Conference, (9/1977), Reide Publ. (1978).
Paul et al., Doping, Schottky Barrier and p-n Junction Formation in a-Ge and -Si by rf Sputtering, Solid State Communications, vol. 20, No. 10, (Dec. 1976) p. 969.
Thompson et al., Co-Sputtered Doped a-Si as a Photovoltaic Material, Conf. Rec., 14th IEEE PVSp. Conf., (1980).

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