Photosensor for a transmitted light method used for...

Details Photosensor for a transmitted light method used for... Photosensor for a transmitted light method used for...

2008-01-29

2008-01-29

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S053000, C257S462000, C438S048000, C438S057000, C438S462000

Reexamination Certificate

active

07323759

ABSTRACT:
A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor components are connected with each other, such that the first semiconductor component and the second semiconductor component each have a photoelectrically active first semiconductor layer, and such that the two photoelectrically active semiconductor layers have a fixed phase relation to each other, which is adjusted by at least one photoelectrically inactive layer.

REFERENCES:
patent: 4441789 (1984-04-01), Pohlack
patent: 5389797 (1995-02-01), Bryan et al.
patent: 5414282 (1995-05-01), Ogura
patent: 5621750 (1997-04-01), Iwano et al.
patent: 6013912 (2000-01-01), Pautrat et al.
patent: 6281561 (2001-08-01), Stiebig et al.
patent: 6959025 (2005-10-01), Jikutani et al.
patent: 2001/0013912 (2001-08-01), Yamazaki et al.

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