Photosensor array for image processing apparatus

Electrical resistors – Resistance value responsive to a condition – Photoconductive

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338 15, H01L 3108

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active

048355070

ABSTRACT:
A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.

REFERENCES:
patent: 4405915 (1983-09-01), Komatsu et al.
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4650984 (1987-03-01), Furushima et al.
F. Okamura, et al., "Amorphous Si: H Linear Image Sensor Operated by A-Si: H TFT Array"; Extended Abstracts of the 15th Conference on Solid State Devices and Materials, Tokyo, 1983, pp. 201-204.

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