Photosensor

Patent

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Details

357 2, 357 49, H01L 2714, H01L 3100

Patent

active

046672141

ABSTRACT:
A photosensor comprises a glass substrate, a photoelectric converting layer comprising a silicon-based amorphous material, and a pair of electrode layers in electrical contact with the photoelectric converting layer, wherein one or both sides of the glass substrate are covered with dielectric layers and the photoelectric converting layer is formed upon the dielectric layer.

REFERENCES:
patent: 4291318 (1981-09-01), Sansregret
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4527865 (1985-07-01), Washo et al.

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