Photosensitive semiconductor resistor

Details Photosensitive semiconductor resistor Photosensitive semiconductor resistor

1982-02-01

1984-07-24

Reynolds, B. A.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

357 30, 250211K, H01L 3108

Patent

active

044620195

ABSTRACT:
A photosensitive semiconductor resistor has a monocrystalline semiconductor body of one conductivity type which, on two oppositely located surfaces, is provided with an anode contact and with a cathode contact, and is constructed so that the cathode contact is a highly doped zone of the same conductivity type as the semiconductor body. The semiconductor body can be exposed to photon radiation at its surface supporting the cathode contact and the area of the anode contact is at least 1000 times larger than the area of the cathode contact. Such a photosensitive semiconductor resistor is easy to manufacture and has both a low inertia and a good sensitivity.

REFERENCES:
patent: 2805347 (1957-09-01), Haynes et al.
patent: 3660733 (1972-05-01), Vilf et al.
N. Sclar, "Properties of High Performance Background Limited P Type Si:Zn Photoconductors," Mar. 1981--Solid State Electronics, pp. 203-204, 210.
Deboo, Burrous, Integrated Circuits & Semiconductor Devices Theory & Applications, 1977, pp. 316-322.

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