Photosensitive resin composition and method for forming fine pat

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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430194, 430927, 430325, 430331, 260349, G03C 152, G03C 160, G03C 516

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active

045542376

ABSTRACT:
Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.
Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].

REFERENCES:
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patent: 3869292 (1975-03-01), Peters
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Takao Iwayanagi et al., "Azide-Phenolic Resin Photoresists for Deep UV Lithography", IEEE Transactions on Electron Devices, Nov. 1981, vol. Ed.-28, No. 11, pp. 1306-1310.

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