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427 74, 357 2, 2525011, H01L 4500, B05P 512

Patent

active

044093110

ABSTRACT:
A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4297392 (1981-10-01), Higashi et al.
patent: 4356246 (1982-10-01), Tabei et al.
"Structural Interpretation of the Vibrational Spectra of a-Si: H Alloys", G. Lucovsky et al., Physical Review B, vol. 19, No. 4, Nov. 15, 1979.

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