Photosensitive diode element and array

Facsimile and static presentation processing – Facsimile – Specific signal processing circuitry

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357 15, 357 32, 357 24, 358212, H01L 2714

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048664995

ABSTRACT:
A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second layer overlying the first layer and being transparent to optical energy. As a result of using hydrogenated amorphous-silicon, the phtosensitive diode element according to the present invention has characteristics of high photoconductivity, controllably variable optical gap, and thin film structure. A photosensitive diode array formed from the subject diode elements is easily fabricated, employs straightforward circuitry for addressing each diode element, and is characterized by low crosstalk between elements, maximized optical sensitivity and broad dynamic range.

REFERENCES:
patent: 3604987 (1971-09-01), Assour
patent: 3902066 (1975-08-01), Roosild et al.
patent: 4246043 (1981-01-01), Lindmayer
patent: 4485389 (1984-11-01), Ovshinsky et al.
patent: 4633031 (1986-12-01), Todorof
Aktik et al; "High Efficiency a-Si:H MIS Solar Cells"; Dept. de geme physique Ecole Polytechnique; Montreal, Canada.
M. Aktik et al., "Density of States in Amorphous Silicon Produced by Microwave Glow Discharge", J. Appln. Phys., 53 (1) (1982), pp. 439-441.
C. Aktik et al., "Amorphous Silicon Prepared by Plasma Decomposition; Properties and Schottky Devices", Proceedings of the First Canadian Semiconductor Technology Conference, Ottawa, Canada (1982), pp. 153-160.
M. Aktik et al., "Schottky Devices Prepared with A-Si:H Glow Discharge Films", Proceedings of Energex, Regina, Canada (1982).
C. Aktik et al., "A Novel Doping Procedure for a-Si:H", J. Non Crys. Sol., 59-60 (1983), pp. 309-312.
C. Aktik et al., "High Efficiency a-Si:H MIS Solar Cells", Proceedings of the 10th Conference of Solar Energy Society of Canada, SESCI 84, Calgary.
C. Aktik et al., "Progress in Amorphous-Silicon Photovoltaic-device Research", Canada J. Phys., 63 (1985), pp. 786-797.

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